Introduction
In the semiconductor industry, patents are not only a reflection of a company's technological strength but also a key weapon in market competition. InnoGaN, as a leading domestic gallium nitride (GaN) semiconductor company, has achieved remarkable success in patent layout and intellectual property protection in recent years, forging an impressive patent "comeback journey." As a market research company, we have conducted an in-depth analysis of InnoGaN's patent strategy and successful experience, hoping to provide references for other companies.

I. Technological Innovation and Patent Layout
InnoGaN's innovation and patent layout in the GaN technology field are the keys to its comeback. As of 2024, InnoGaN has more than 700 patents and patent applications worldwide, covering key areas such as chip design, manufacturing processes, and packaging structures. These patents not only protect the company's core technologies but also provide a solid guarantee for the competitiveness of its products in the market.
For example, InnoGaN has recently obtained a series of important patents, including a chip liquid cooling structure patent, a transformer structure patent that can reduce board space, and a packaging structure patent. The acquisition of these patents has further consolidated its leading position in GaN chip heat dissipation, miniaturization, and packaging technology.

II. Responding to International Patent Litigation
In global competition, InnoGaN faces patent challenges from international giants. In April 2025, InnoGaN successfully responded to a patent lawsuit from Efficient Power Conversion Corporation (EPC) in the United States. Through the patent invalidation procedure of the United States Patent and Trademark Office, it successfully refuted the infringement allegations. This case not only demonstrated InnoGaN's professional capabilities in the patent invalidation process but also reflected its proactive attitude in global intellectual property protection.
By employing a "removing the firewood from under the pot" approach in the patent invalidation procedure, InnoGaN successfully overturned the incorrect judgment of the EPC patent by the United States International Trade Commission (ITC), proving that EPC's allegations were baseless and a form of malicious competition. This victory not only saved InnoGaN a significant amount of litigation costs but also enhanced its reputation and competitiveness in the international market.

III. IDM Model and Patent Synergy
InnoGaN adopts the IDM (Integrated Device Manufacturing) model, integrating chip design, manufacturing, packaging, and testing. This model not only improves the company's production efficiency and product quality but also provides strong support for its patent layout. Through the IDM model, InnoGaN can quickly transform patent technology into actual products, accelerate market promotion and customer feedback, and further optimize its patent layout.
For example, InnoGaN's 8-inch silicon-based GaN wafer mass production capability gives it significant advantages in cost control and capacity utilization. This technological leadership and patent synergy enable InnoGaN to quickly establish a foothold in the global market.

IV. Market Expansion and Patent Support
InnoGaN's patent strategy is not limited to technological protection but also actively supports market expansion. The company has successfully entered several high-growth areas, including consumer electronics, data centers, and automotive electronics, through its patent layout. For example, InnoGaN's 100V half-bridge GaN power chip ISG3201, suitable for high-frequency, high-power applications such as 48V power systems and power tools.
Moreover, InnoGaN's INN100EA035A chip in the data center field has become the world's first 100V-class GaN solution to achieve mass production, significantly improving the power density and energy efficiency of data centers. The launch of these innovative products, supported by patent technology, has further consolidated InnoGaN's market position in these fields.

V. Future Outlook
With the rapid development of third-generation semiconductor technology, the GaN market has a broad prospect. According to Frost & Sullivan's forecast, the global GaN power semiconductor market size will reach 50.1 billion yuan by 2028. Leveraging its technological leadership and patent layout, InnoGaN is expected to capture a significant share of this market.
In the future, InnoGaN will continue to increase R&D investment and expand its patent layout, especially in fields such as humanoid robots, electric vehicles, and data centers. Through continuous technological innovation and patent protection, InnoGaN will not only consolidate its leading position in the domestic market but also further enhance its influence in the global market.

Conclusion
InnoGaN's patent "comeback journey" is a successful example of the combination of technological innovation, patent layout, and market expansion. By actively responding to international patent litigation, optimizing patent synergy through the IDM model, and supporting market expansion, InnoGaN has achieved remarkable success in the GaN field. As a market research company, we believe that InnoGaN's successful experience will provide valuable references for other companies and promote the healthy development of the entire semiconductor industry.